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数量 | 价钱 (含税) |
---|---|
1+ | CNY18.890 (CNY21.3457) |
10+ | CNY16.610 (CNY18.7693) |
50+ | CNY15.210 (CNY17.1873) |
100+ | CNY13.820 (CNY15.6166) |
250+ | CNY12.710 (CNY14.3623) |
500+ | CNY11.840 (CNY13.3792) |
1000+ | CNY9.040 (CNY10.2152) |
2500+ | CNY9.020 (CNY10.1926) |
产品信息
产品概述
The LM5106SD/NOPB is a high-voltage Gate Driver designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half bridge configuration. The floating high-side driver is capable of working with rail voltage up to 100V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-ON delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Under-voltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold.
- Drives both a high-side and low-side N-channel MOSFET
- Single TTL compatible input
- Programmable turn-ON delays (dead-time)
- Enable input pin
- Supply rail under-voltage lockout protection
- Low power consumption
- Drives 1000pF with 15ns rise and 10ns fall time
- 118VDC Bootstrap supply voltage
- Green product and no Sb/Br
技术规格
2放大器
半桥
10引脚
表面安装
1.2A
8V
-40°C
115ns
-
MSL 1 -无限制
-
MOSFET
WSON
非反向
1.8A
14V
125°C
32ns
-
No SVHC (27-Jun-2018)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书