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数量 | 价钱 (含税) |
---|---|
1+ | CNY7.800 (CNY8.814) |
10+ | CNY5.210 (CNY5.8873) |
100+ | CNY5.200 (CNY5.876) |
500+ | CNY5.180 (CNY5.8534) |
1000+ | CNY5.160 (CNY5.8308) |
5000+ | CNY5.140 (CNY5.8082) |
产品信息
产品概述
The TISP6NTP2CDR-S is a quad forward-conducting P-gate high voltage ringing Thyristor SLIC Protector with twin commoned gates and a common anode connection. The thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each thyristor. The buffer transistors reduce the gate supply current. The programmable overvoltage protector protects the two POTS line SLICs against overvoltage caused by lightning, AC power contact and induction. Positive overvoltage are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltage is initially clipped close to the SLIC negative supply by emitter follower action of the buffer transistor. If sufficient clipping current flows, the thyristor will regenerate and switch into a low voltage ON-state condition. As the overvoltage subsides, the high holding current of the thyristor helps prevent DC latch-up.
- Independent tracking overvoltage protection for two SLICs
- Dual voltage-programmable protector
- Supports battery voltage down to -155V
- 5mA Maximum low gate triggering current
- 150mA Minimum high holding current (70°C)
- Specified 2/10 limiting voltage
- 0 to 70°C Temperature range
技术规格
-
SOIC
15V
-
-
8引脚
SLIC保护器
2电路
-170V
No SVHC (21-Jan-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Great Britain
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书