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DMP4015SK3-13
功率场效应管, MOSFET, P通道, 40 V, 35 A, 0.011 ohm, TO-252 (DPAK), 表面安装
产品信息
制造商DIODES INC.
制造商产品编号DMP4015SK3-13
库存编号2543554
技术数据表
通道类型P通道
漏源电压, Vds40V
电流, Id 连续35A
漏源接通状态电阻0.011ohm
晶体管封装类型TO-252 (DPAK)
晶体管安装表面安装
Rds(on)测试电压10V
阈值栅源电压最大值2V
功率耗散3.5W
针脚数3引脚
工作温度最高值150°C
产品范围-
合规-
湿气敏感性等级MSL 1 -无限制
SVHC(高度关注物质)Lead (25-Jun-2025)
产品概述
DMP4015SK3-13 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include backlighting, power-management functions, DC-DC converters.
- 100% unclamped inductive switch (UIS) test in production
- Low on-resistance, fast switching speed
- Drain-source voltage is -40V at TA = +25°C
- Gate-source voltage is ±25V at TA = +25°C
- Continuous drain current is -35A at TC = +25°C, steady state, VGS = -10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -100A at TA = +25°C
- Total power dissipation is 3.5W at TA = +25°C
- Static drain-source on-resistance is 11mohm max at VGS = -10V, ID = -9.8A, TA = +25°C
- TO252 (DPAK) package
- Operating and storage temperature range from -55 to +150°C
技术规格
通道类型
P通道
电流, Id 连续
35A
晶体管封装类型
TO-252 (DPAK)
Rds(on)测试电压
10V
功率耗散
3.5W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
Lead (25-Jun-2025)
漏源电压, Vds
40V
漏源接通状态电阻
0.011ohm
晶体管安装
表面安装
阈值栅源电压最大值
2V
针脚数
3引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (25-Jun-2025)
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