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数量 | 价钱 (含税) |
---|---|
1+ | CNY5.030 (CNY5.6839) |
10+ | CNY3.180 (CNY3.5934) |
100+ | CNY3.070 (CNY3.4691) |
500+ | CNY2.940 (CNY3.3222) |
1000+ | CNY2.820 (CNY3.1866) |
2500+ | CNY2.700 (CNY3.051) |
5000+ | CNY2.560 (CNY2.8928) |
产品信息
产品概述
The ZXGD3001E6TA is a high-speed non-inverting single MOSFET Gate Driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3001E6 is inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs and the optimized with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
- Fast switching emitter-follower configuration
- Low input current requirement
- Separate source and sink outputs for independent control of rise and fall time
- Optimized pin-out to ease board layout and minimize trace inductance
- No latch-up
- No shoot through
- Near - zero quiescent and output leakage current
技术规格
1放大器
低压侧
6引脚
表面安装
9A
0V
-55°C
1.3ns
-
MSL 1 -无限制
-
MOSFET
SOT-23
非反向
9A
12V
150°C
3ns
AEC-Q101
No SVHC (27-Jun-2024)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Great Britain
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书