产品信息
产品概述
The ZXGD3002E6TA is a Non-inverting Single MOSFET Gate Driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3002E6 is inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs enables reduced parasitic inductance and independent control of rise and fall slew rates.
- Fast switching emitter-follower configuration
- 2ns Propagation delay time
- 11ns Rise/fall time, 1000pF load
- Low input current requirement
- Separate source and sink outputs for independent control of rise and fall time
- Optimized pin-out to ease board layout and minimize trace inductance
- No latch-up
- No shoot through
- Near zero quiescent and output leakage current
警告
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
1放大器
低压侧
6引脚
表面安装
9A
0V
-55°C
1.25ns
-
-
-
MOSFET
SOT-23
非反向
9A
20V
150°C
1.6ns
-
No SVHC (27-Jun-2024)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Great Britain
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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