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2N7002DW-7-F
Dual MOSFET, N Channel, 60 V, 230 mA, 7.5 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 500+ | CNY0.576 (CNY0.6509) |
| 1500+ | CNY0.565 (CNY0.6384) |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
CNY288.00 (CNY325.44 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002DW-7-F
Order Code1713824RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)13.5ohm
Continuous Drain Current Id N Channel230mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel7.5ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd200mW
Power Dissipation N Channel310mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching performance
- Low input/output leakage
- Ultra-small surface-mount package
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
7.5ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
200mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
230mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
310mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006