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BSS84DW-7-F
Dual MOSFET, P Channel, 50 V, 130 mA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBSS84DW-7-F
Order Code1713835RL
Your Part Number
Technical Datasheet
952 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.520 (CNY1.7176) |
| 500+ | CNY0.969 (CNY1.095) |
| 1500+ | CNY0.950 (CNY1.0735) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY152.00 (CNY171.76 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS84DW-7-F
Order Code1713835RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds50V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id130mA
Drain Source Voltage Vds P Channel50V
On Resistance Rds(on)10ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel130mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage5V
Drain Source On State Resistance P Channel10ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.6V
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel-
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSS84DW-7-F is a dual P-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for general purpose interfacing switch and analogue switch applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching performance
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
50V
Continuous Drain Current Id
130mA
On Resistance Rds(on)
10ohm
Continuous Drain Current Id P Channel
130mA
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
10ohm
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
300mW
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006