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DMC3028LSD
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.028 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.420 (CNY2.7346) |
| 500+ | CNY1.860 (CNY2.1018) |
| 1000+ | CNY1.660 (CNY1.8758) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY242.00 (CNY273.46 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC3028LSD
Order Code2061402RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.028ohm
Continuous Drain Current Id N Channel5.5A
Continuous Drain Current Id P Channel5.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.028ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.028ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation Pd1.3W
No. of Pins8Pins
Power Dissipation N Channel1.3W
Power Dissipation P Channel1.3W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The DMC3028LSD is a 30V Complementary Dual Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals solderable as per MIL-STD-202 standard, method 208. it is ideal for high efficiency power management applications such as DC-DC converters and backlighting.
- Low on-resistance
- Fast switching speed
- UL94V-0 Flammability rating
Applications
Motor Drive & Control, Power Management, Aerospace, Defence, Military
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.5A
On Resistance Rds(on)
0.028ohm
Continuous Drain Current Id P Channel
5.5A
Drain Source On State Resistance N Channel
0.028ohm
Drain Source On State Resistance P Channel
0.028ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
1.3W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
5.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.3W
Power Dissipation N Channel
1.3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227