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DMG1029SV-7
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 500 mA, 360 mA, 1.7 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.280 (CNY1.4464) |
| 500+ | CNY1.040 (CNY1.1752) |
| 1500+ | CNY1.020 (CNY1.1526) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY128.00 (CNY144.64 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1029SV-7
Order Code2543528RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id500mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1.3ohm
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel360mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.7ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel4ohm
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation Pd450mW
Power Dissipation N Channel450mW
Power Dissipation P Channel450mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMG1029SV-7 is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general-purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Ultra-small surface mount package
- Drain-source voltage is 60V at TA = +25°C, (P/N-channel)
- Continuous drain current is 500mA at TA = +25°C, steady state, VGS = 10V, (P/N-channel)
- Total power dissipation is 0.45W at TA = +25°C, (P/N-channel)
- Static drain-source on-resistance is 1.3ohm at VGS = 10V, ID = 500mA, (P/N-channel)
- SOT563 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.3ohm
Continuous Drain Current Id P Channel
360mA
Drain Source On State Resistance N Channel
1.7ohm
Drain Source On State Resistance P Channel
4ohm
Transistor Case Style
SOT-563
Power Dissipation Pd
450mW
Power Dissipation P Channel
450mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
500mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation N Channel
450mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005