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DMG3415UFY4Q-7
Power MOSFET, P Channel, 16 V, 2.5 A, 0.031 ohm, X2-DFN2015, Surface Mount
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390 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.430 (CNY5.0059) |
| 10+ | CNY2.970 (CNY3.3561) |
| 100+ | CNY1.880 (CNY2.1244) |
| 500+ | CNY1.480 (CNY1.6724) |
| 1000+ | CNY1.310 (CNY1.4803) |
| 5000+ | CNY1.160 (CNY1.3108) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY22.15 (CNY25.03 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG3415UFY4Q-7
Order Code3943489
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds16V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.031ohm
Transistor Case StyleX2-DFN2015
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation650mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
X2-DFN2015
Rds(on) Test Voltage
4.5V
Power Dissipation
650mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
16V
Drain Source On State Resistance
0.031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001