Print Page
DMN2056U-7
Power MOSFET, N Channel, 20 V, 4 A, 0.038 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
20,321 In Stock
Need more?
13020 Next business day delivery available(Shanghai stock)
7301 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.675 (CNY0.7628) |
| 50+ | CNY0.565 (CNY0.6384) |
| 100+ | CNY0.486 (CNY0.5492) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY3.38 (CNY3.81 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2056U-7
Order Code2709529
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source On State Resistance0.038ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation660mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN2056U-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(on)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include battery charging, power management functions, DC-DC converters, portable power adaptors.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±8V at TA = +25°C
- Continuous drain current is 4.0A at TA = +25°C, steady state, VGS = 4.5V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 22A at TA = +25°C
- Total power dissipation is 0.66W at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
660mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.038ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for DMN2056U-7
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008