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DMT3020LSDQ-13
Dual MOSFET, N Channel, 30 V, 30 V, 16 A, 16 A, 0.032 ohm
Image is for illustrative purposes only. Please refer to product description.
617 In Stock
10 more incoming. You can reserve stock now
617 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.250 (CNY2.5425) |
| 500+ | CNY2.180 (CNY2.4634) |
| 1000+ | CNY2.110 (CNY2.3843) |
| 5000+ | CNY2.030 (CNY2.2939) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY225.00 (CNY254.25 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMT3020LSDQ-13
Order Code3405247RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id16A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.014ohm
Continuous Drain Current Id N Channel16A
Continuous Drain Current Id P Channel16A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.032ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
No. of Pins8Pins
Power Dissipation Pd1W
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.014ohm
Continuous Drain Current Id P Channel
16A
Drain Source On State Resistance N Channel
0.032ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
1W
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
16A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002