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ZXMHC6A07T8TA
Dual MOSFET, H-Bridge, Complementary N and P Channel, 60 V, 60 V, 1.8 A, 1.8 A, 1.5 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY7.800 (CNY8.814) |
| 200+ | CNY7.560 (CNY8.5428) |
| 500+ | CNY7.360 (CNY8.3168) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY780.00 (CNY881.40 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMHC6A07T8TA
Order Code7565020RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id1.8A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel1.8A
On Resistance Rds(on)1.5ohm
Continuous Drain Current Id P Channel1.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.5ohm
Drain Source On State Resistance P Channel1.5ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
Power Dissipation Pd1.7W
No. of Pins8Pins
Power Dissipation N Channel1.7W
Power Dissipation P Channel1.7W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The ZXMHC6A07T8TA is a 60V Enhancement Mode H-bridge MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applications.
- Low on-resistance
- Low input capacitance
- Fast switching speed
- UL94V-0 Flammability rating
Applications
Power Management, Motor Drive & Control, Aerospace, Defence, Military
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
1.8A
Continuous Drain Current Id N Channel
1.8A
Continuous Drain Current Id P Channel
1.8A
Drain Source On State Resistance N Channel
1.5ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
1.7W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1.5ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.7W
Power Dissipation N Channel
1.7W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454