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ZXMS6004DN8-13
Dual MOSFET, N Channel, 60 V, 60 V, 1.2 A, 1.2 A, 0.35 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13
Order Code3127508RL
Product RangeIntelliFET Series
Technical Datasheet
3,725 In Stock
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3725 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.360 (CNY3.7968) |
| 500+ | CNY3.250 (CNY3.6725) |
| 1000+ | CNY3.130 (CNY3.5369) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY336.00 (CNY379.68 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13
Order Code3127508RL
Product RangeIntelliFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id1.2A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.35ohm
Continuous Drain Current Id N Channel1.2A
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance N Channel0.35ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.35ohm
Rds(on) Test Voltage5V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd1.21W
Power Dissipation N Channel1.21W
Power Dissipation P Channel1.21W
Operating Temperature Max150°C
Product RangeIntelliFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
1.2A
On Resistance Rds(on)
0.35ohm
Continuous Drain Current Id P Channel
1.2A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.21W
Power Dissipation P Channel
1.21W
Product Range
IntelliFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
1.2A
Drain Source On State Resistance N Channel
0.35ohm
Drain Source On State Resistance P Channel
0.35ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.21W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074