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2N7002DWH6327XTSA1
Dual MOSFET, N Channel, 60 V, 60 V, 300 mA, 300 mA, 1.6 ohm
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ManufacturerINFINEON
Manufacturer Part No2N7002DWH6327XTSA1
Order Code2443473RL
Also Known As2N7002DW H6327, SP000917596
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY1.040 (CNY1.1752) |
| 250+ | CNY0.745 (CNY0.8418) |
| 1000+ | CNY0.449 (CNY0.5074) |
| 7500+ | CNY0.361 (CNY0.4079) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY104.00 (CNY117.52 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part No2N7002DWH6327XTSA1
Order Code2443473RL
Also Known As2N7002DW H6327, SP000917596
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id300mA
Continuous Drain Current Id N Channel300mA
On Resistance Rds(on)1.6ohm
Continuous Drain Current Id P Channel300mA
Drain Source On State Resistance N Channel1.6ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel1.6ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2.1V
No. of Pins6Pins
Power Dissipation Pd500mW
Power Dissipation N Channel500mW
Power Dissipation P Channel500mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002DW H6327 is a dual N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications.
Applications
Automotive
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
300mA
Continuous Drain Current Id P Channel
300mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1.6ohm
Gate Source Threshold Voltage Max
2.1V
Power Dissipation Pd
500mW
Power Dissipation P Channel
500mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
300mA
On Resistance Rds(on)
1.6ohm
Drain Source On State Resistance N Channel
1.6ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635