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AUIRF7316QTR
Dual MOSFET, P Channel, 30 V, 30 V, 4.9 A, 4.9 A, 0.042 ohm
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ManufacturerINFINEON
Manufacturer Part NoAUIRF7316QTR
Order Code2725789RL
Product RangeHEXFET Series
Also Known AsSP001518472
Technical Datasheet
110 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY15.730 (CNY17.7749) |
| 250+ | CNY13.970 (CNY15.7861) |
| 1000+ | CNY11.990 (CNY13.5487) |
| 2000+ | CNY11.260 (CNY12.7238) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY1,573.00 (CNY1,777.49 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7316QTR
Order Code2725789RL
Product RangeHEXFET Series
Also Known AsSP001518472
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id4.9A
On Resistance Rds(on)0.042ohm
Continuous Drain Current Id N Channel4.9A
Continuous Drain Current Id P Channel4.9A
Drain Source On State Resistance N Channel0.042ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.042ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Alternatives for AUIRF7316QTR
1 Product Found
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.042ohm
Continuous Drain Current Id P Channel
4.9A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.042ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4.9A
Continuous Drain Current Id N Channel
4.9A
Drain Source On State Resistance N Channel
0.042ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074