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AUIRF7341QTR
Dual MOSFET, N Channel, 55 V, 55 V, 5.1 A, 5.1 A, 0.043 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF7341QTR
Order Code2725790RL
Product RangeHEXFET Series
Also Known AsSP001515768
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY14.370 (CNY16.2381) |
| 500+ | CNY10.990 (CNY12.4187) |
| 1000+ | CNY10.030 (CNY11.3339) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY1,437.00 (CNY1,623.81 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7341QTR
Order Code2725790RL
Product RangeHEXFET Series
Also Known AsSP001515768
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Continuous Drain Current Id5.1A
Drain Source Voltage Vds P Channel55V
On Resistance Rds(on)0.043ohm
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.043ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd2.4W
Power Dissipation N Channel2.4W
Power Dissipation P Channel2.4W
Operating Temperature Max175°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (08-Jul-2021)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.043ohm
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance N Channel
0.043ohm
Drain Source On State Resistance P Channel
0.043ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2.4W
Power Dissipation P Channel
2.4W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (08-Jul-2021)
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id N Channel
5.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000176