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BSC050NE2LSATMA1
Power MOSFET, N Channel, 25 V, 58 A, 0.005 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC050NE2LSATMA1
Order Code2443420RL
Also Known AsBSC050NE2LS, SP000756340
Technical Datasheet
1,639 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.860 (CNY3.2318) |
| 500+ | CNY2.390 (CNY2.7007) |
| 1000+ | CNY2.140 (CNY2.4182) |
| 5000+ | CNY1.870 (CNY2.1131) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY286.00 (CNY323.18 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC050NE2LSATMA1
Order Code2443420RL
Also Known AsBSC050NE2LS, SP000756340
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id58A
Drain Source On State Resistance0.005ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation28W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC050NE2LS is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator applications. It is available in half-bridge configuration. It minimizes EMI in the system making external snubber networks obsolete and the products easy to design-in.
- Save space with smallest packages like CanPAK™
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.005ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000159