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BSC123N08NS3GATMA1
Power MOSFET, N Channel, 80 V, 55 A, 0.0103 ohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC123N08NS3GATMA1
Order Code1775469
Also Known AsBSC123N08NS3 G, SP000443916
Technical Datasheet
78,914 In Stock
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68258 Delivery in 5-6 Business Days(UK stock)
10656 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.620 (CNY13.1306) |
| 10+ | CNY7.430 (CNY8.3959) |
| 100+ | CNY5.850 (CNY6.6105) |
| 500+ | CNY4.710 (CNY5.3223) |
| 1000+ | CNY3.990 (CNY4.5087) |
| 5000+ | CNY3.720 (CNY4.2036) |
Price for:Each
Minimum: 1
Multiple: 1
CNY11.62 (CNY13.13 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC123N08NS3GATMA1
Order Code1775469
Also Known AsBSC123N08NS3 G, SP000443916
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id55A
Drain Source On State Resistance0.0103ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation66W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC123N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
- Optimized technology for DC-to-DC converters
- Excellent gate charge x RDS (ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Low profile
- Normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control, LED Lighting, Automotive
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation
66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0103ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000172