BSC159N10LSF G
Power MOSFET, N Channel, 100 V, 63 A, 0.0159 ohm, PG-TDSON, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY17.970 (CNY20.3061) |
| 10+ | CNY12.970 (CNY14.6561) |
| 100+ | CNY10.510 (CNY11.8763) |
| 500+ | CNY7.200 (CNY8.136) |
| 1000+ | CNY6.440 (CNY7.2772) |
| 5000+ | CNY6.080 (CNY6.8704) |
Product Information
Product Overview
The BSC159N10LSF G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Communications & Networking, Industrial, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
63A
PG-TDSON
10V
114W
150°C
-
No SVHC (08-Jul-2021)
100V
0.0159ohm
Surface Mount
1.85V
8Pins
-
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate