BSZ123N08NS3GATMA1
Power MOSFET, N Channel, 80 V, 40 A, 0.0103 ohm, PG-TSDSON, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.020 (CNY12.4526) |
| 10+ | CNY7.720 (CNY8.7236) |
| 100+ | CNY6.010 (CNY6.7913) |
| 500+ | CNY5.090 (CNY5.7517) |
| 1000+ | CNY3.910 (CNY4.4183) |
| 5000+ | CNY3.730 (CNY4.2149) |
Product Information
Product Overview
The BSZ123N08NS3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Dual sided cooling
- Low parasitic inductance
- Low profile (<lt/>0.7mm)
- Reduced switching and conduction losses
- Superior thermal resistance
Applications
Alternative Energy, Consumer Electronics, Communications & Networking, Computers & Computer Peripherals, Power Management, LED Lighting, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
40A
PG-TSDSON
10V
66W
150°C
-
No SVHC (21-Jan-2025)
80V
0.0103ohm
Surface Mount
2.8V
8Pins
-
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate