Print Page
BSZ215CHXTMA1
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 5.1 A, 0.041 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
25,189 In Stock
Need more?
25189 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY5.800 (CNY6.554) |
| 250+ | CNY4.590 (CNY5.1867) |
| 1000+ | CNY4.300 (CNY4.859) |
| 3000+ | CNY4.000 (CNY4.520) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY580.00 (CNY655.40 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ215CHXTMA1
Order Code3294674RL
Product RangeOptiMOS 2 Series
Also Known AsBSZ215C H, SP001277210
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id5.1A
On Resistance Rds(on)0.041ohm
Continuous Drain Current Id N Channel5.1A
Continuous Drain Current Id P Channel5.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.041ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.041ohm
Transistor Case StyleTSDSON
Gate Source Threshold Voltage Max1.1V
Power Dissipation Pd2.5W
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max175°C
Product RangeOptiMOS 2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.041ohm
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance N Channel
0.041ohm
Drain Source On State Resistance P Channel
0.041ohm
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
OptiMOS 2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
5.1A
Continuous Drain Current Id N Channel
5.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSDSON
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109