BSZ520N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, PG-TSDSON, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.620 (CNY13.1306) |
| 10+ | CNY8.830 (CNY9.9779) |
| 100+ | CNY6.840 (CNY7.7292) |
| 500+ | CNY5.800 (CNY6.554) |
| 1000+ | CNY5.280 (CNY5.9664) |
| 5000+ | CNY4.480 (CNY5.0624) |
Product Information
Product Overview
The BSZ520N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Optimized for DC-to-DC conversion
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
21A
PG-TSDSON
10V
57W
150°C
-
No SVHC (21-Jan-2025)
150V
0.042ohm
Surface Mount
3V
8Pins
-
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate