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FF150R12RT4HOSA1
IGBT Module, Dual [Half Bridge], 150 A, 1.75 V, 790 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoFF150R12RT4HOSA1
Order Code2726121
Also Known AsFF150R12RT4, SP000624908
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF150R12RT4HOSA1
Order Code2726121
Also Known AsFF150R12RT4, SP000624908
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current150A
Collector Emitter Saturation Voltage1.75V
Power Dissipation790W
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Collector Emitter Saturation Voltage
1.75V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
-
Continuous Collector Current
150A
Power Dissipation
790W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Slovak Republic
Country in which last significant manufacturing process was carried out
Tariff No:85359000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1642