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IPB027N10N3GATMA1
Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB027N10N3GATMA1
Order Code2443379
Also Known AsIPB027N10N3 G, SP000506508
Technical Datasheet
3,000 In Stock
Need more?
3000 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY23.950 (CNY27.0635) |
| 10+ | CNY20.500 (CNY23.165) |
| 50+ | CNY19.320 (CNY21.8316) |
| 200+ | CNY18.950 (CNY21.4135) |
| 500+ | CNY18.560 (CNY20.9728) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY23.95 (CNY27.06 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB027N10N3GATMA1
Order Code2443379
Also Known AsIPB027N10N3 G, SP000506508
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0023ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB027N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Environmentally friendly
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Halogen-free, Green device
- MSL1 rated 2
Applications
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181