Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP052NE7N3GXKSA1
Order Code2480849
Product RangeOptiMOS 3 Series
Also Known AsIPP052NE7N3 G, SP000641726
Technical Datasheet
9,090 In Stock
Need more?
924 Next business day delivery available(Shanghai stock)
8166 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.430 (CNY16.3059) |
| 10+ | CNY9.450 (CNY10.6785) |
| 100+ | CNY7.110 (CNY8.0343) |
| 500+ | CNY6.010 (CNY6.7913) |
| 1000+ | CNY5.900 (CNY6.667) |
Price for:Each
Minimum: 1
Multiple: 1
CNY14.43 (CNY16.31 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP052NE7N3GXKSA1
Order Code2480849
Product RangeOptiMOS 3 Series
Also Known AsIPP052NE7N3 G, SP000641726
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id80A
Drain Source On State Resistance5200µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IPP052NE7N3GXKSA1
4 Products Found
Product Overview
- Opti MOS™3 power transistor
- Optimized technology for synchronous rectification
- Ideal for high frequency switching and DC/DC converter
- Excellent gate charge x RDC(on) product (FOM)
- Very low on resistance RDS(on), N channel, normal level
- 100% avalanche tested, qualified according to JEDEC for target application
- 75V minimum drain source breakdown voltage (VGS=0V, 1D=1mA, 25°C)
- 5.2mohm maximum drain source on state resistance (VGSS=10V, 1D=80A, 25°C)
- 2.2ohm gate resistance
- PG-TO220-3 package, operating temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
5200µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002008