IPP110N20N3GXKSA1
Power MOSFET, N Channel, 200 V, 88 A, 0.0099 ohm, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY31.580 (CNY35.6854) |
| 10+ | CNY25.060 (CNY28.3178) |
| 100+ | CNY20.500 (CNY23.165) |
| 500+ | CNY17.340 (CNY19.5942) |
| 1000+ | CNY15.360 (CNY17.3568) |
Product Information
Product Overview
The IPP110N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Applications
Power Management, Motor Drive & Control, Lighting, Industrial, Audio, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
88A
TO-220
10V
300W
175°C
-
No SVHC (21-Jan-2025)
200V
0.0099ohm
Through Hole
3V
3Pins
-
-
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate