IPW65R080CFDFKSA1
Power MOSFET, N Channel, 700 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY39.270 (CNY44.3751) |
| 5+ | CNY35.520 (CNY40.1376) |
Product Information
Alternatives for IPW65R080CFDFKSA1
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Product Overview
The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Limited voltage overshoot during hard commutation
- Easy to design in
- Low switching losses due to low Qrr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Qoss
- Reduced turn on and turn off delay times
Applications
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
Through Hole
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TO-247
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Technical Docs (2)
Associated Products
8 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate