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数量 | 价钱 (含税) |
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1+ | CNY40.090 (CNY45.3017) |
5+ | CNY35.990 (CNY40.6687) |
IPW65R080CFDFKSA1 的替代之选
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产品概述
The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Limited voltage overshoot during hard commutation
- Easy to design in
- Low switching losses due to low Qrr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Qoss
- Reduced turn on and turn off delay times
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
N通道
43.3A
TO-247
10V
391W
150°C
-
700V
0.08ohm
通孔
4V
3引脚
-
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法律与环境
进行最后一道重要生产流程所在的地区原产地:China
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RoHS
RoHS
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