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Quantity | Price (inc GST) |
---|---|
1+ | CNY41.130 (CNY46.4769) |
10+ | CNY28.730 (CNY32.4649) |
100+ | CNY21.670 (CNY24.4871) |
500+ | CNY21.020 (CNY23.7526) |
1000+ | CNY20.350 (CNY22.9955) |
Product Information
Product Overview
The IPW65R095C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Notes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Technical Specifications
N Channel
24A
TO-247
10V
128W
150°C
-
No SVHC (21-Jan-2025)
650V
0.084ohm
Through Hole
3.5V
3Pins
-
-
Technical Docs (1)
Alternatives for IPW65R095C7XKSA1
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate