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Quantity | Price (inc GST) |
---|---|
1+ | CNY12.790 (CNY14.4527) |
10+ | CNY9.110 (CNY10.2943) |
50+ | CNY8.970 (CNY10.1361) |
100+ | CNY8.840 (CNY9.9892) |
250+ | CNY8.830 (CNY9.9779) |
500+ | CNY8.820 (CNY9.9666) |
1000+ | CNY8.810 (CNY9.9553) |
2500+ | CNY8.800 (CNY9.944) |
Product Information
Product Overview
The IR2104SPBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout
- Cross-conduction prevention logic
- Internally set dead-time
- High side output in phase with input
- Shut down input turns OFF both channels
- Matched propagation delay for both channels
Applications
Industrial, Consumer Electronics, Alternative Energy, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
Half Bridge
8Pins
Surface Mount
210mA
10V
-40°C
680ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
360mA
20V
125°C
150ns
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IR2104SPBF
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Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate