643 您现在可以预订货品了
数量 | 价钱 (含税) |
---|---|
1+ | CNY12.790 (CNY14.4527) |
10+ | CNY9.110 (CNY10.2943) |
50+ | CNY8.970 (CNY10.1361) |
100+ | CNY8.840 (CNY9.9892) |
250+ | CNY8.830 (CNY9.9779) |
500+ | CNY8.820 (CNY9.9666) |
1000+ | CNY8.810 (CNY9.9553) |
2500+ | CNY8.800 (CNY9.944) |
产品信息
产品概述
The IR2104SPBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout
- Cross-conduction prevention logic
- Internally set dead-time
- High side output in phase with input
- Shut down input turns OFF both channels
- Matched propagation delay for both channels
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
半桥
8引脚
表面安装
210mA
10V
-40°C
680ns
-
MSL 2 - 1年
-
MOSFET
SOIC
非反向
360mA
20V
125°C
150ns
-
No SVHC (21-Jan-2025)
技术文档 (1)
IR2104SPBF 的替代之选
找到 1 件产品
相关产品
找到 1 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书