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IRF7328TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 8 A, 8 A, 0.017 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7328TRPBF
Order Code2468014RL
Also Known AsSP001565270
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7328TRPBF
Order Code2468014RL
Also Known AsSP001565270
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.017ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.017ohm
Drain Source On State Resistance P Channel0.017ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Alternatives for IRF7328TRPBF
1 Product Found
Product Overview
The IRF7328TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications.
- Trench technology
- Ultra low ON-resistance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.017ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
0.017ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (17-Jan-2023)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.017ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005