Print Page
IRFH4253DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 145 A, 0.0011 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFH4253DTRPBF
Order Code2577150RL
Product RangeFastIRFET HEXFET Series
Also Known AsSP001556246
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH4253DTRPBF
Order Code2577150RL
Product RangeFastIRFET HEXFET Series
Also Known AsSP001556246
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel + Schottky
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id145A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel145A
On Resistance Rds(on)900µohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0011ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleQFN
Power Dissipation Pd50W
No. of Pins10Pins
Power Dissipation N Channel50W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
Automotive Qualification Standard-
Product Overview
IRFH4253DTRPBF is a HEXFET® Power MOSFET. Application includes control and synchronous MOSFETs for synchronous buck converters.
- Control and synchronous MOSFETs in one package, increased power density
- Low charge control MOSFET (10nC typical), lower switching losses
- Low RDSON synchronous MOSFET (<lt/>1.45mohm), lower conduction losses
- Intrinsic schottky diode with low forward voltage on Q2, lower switching losses
- Environmentally friendlier, industrial qualification, increased reliability
- Drain-to-source breakdown voltage is 25V (typ, Q1, Q2, VGS = 0V, ID = 250µA/1.0mA)
- Breakdown voltage temp coefficient is 22mV/°C (typ, Q1, Q2, reference to 25°C, ID = 1.0mA)
- Gate threshold voltage is 1.6V (typ, Q1: VDS = VGS, ID = 35µA, Q2: VDS = VGS, ID = 100µA)
- Drain-to-source leakage current is 1.0µA (typ, VDS = 20V, VGS = 0V, TJ = 25°C)
- Dual PQFN package, operating junction and storage temperature range from -55 to + 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
145A
Continuous Drain Current Id N Channel
145A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.0011ohm
Rds(on) Test Voltage
10V
Transistor Case Style
QFN
No. of Pins
10Pins
Power Dissipation P Channel
-
Product Range
FastIRFET HEXFET Series
Automotive Qualification Standard
-
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
900µohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
50W
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001