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Quantity | Price (inc GST) |
---|---|
1+ | CNY29.460 (CNY33.2898) |
10+ | CNY29.320 (CNY33.1316) |
25+ | CNY29.180 (CNY32.9734) |
50+ | CNY29.030 (CNY32.8039) |
100+ | CNY28.890 (CNY32.6457) |
250+ | CNY28.750 (CNY32.4875) |
500+ | CNY28.610 (CNY32.3293) |
Product Information
Product Overview
The IS61LV5128AL-10TLI is a 512K x 8 very high-speed low power high-speed CMOS Static Random Access Memory (SRAM) organized by 524288-word by 8-bit. The IS61LV5128AL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250µW typical with CMOS input levels. The IS61LV5128AL operates from a single 3.3V power supply and all inputs are TTL-compatible.
- High-speed access times - 10ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE
- CE Power-down
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Single 3.3V power supply
Applications
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
Technical Specifications
Asynchronous SRAM
512K x 8bit
44Pins
3.63V
-
-40°C
-
No SVHC (23-Jan-2024)
4Mbit
TSOP
3.135V
3.3V
Surface Mount
85°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate