IRFB4020PBF
Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY13.030 (CNY14.7239) |
| 10+ | CNY4.100 (CNY4.633) |
| 100+ | CNY4.050 (CNY4.5765) |
| 500+ | CNY4.040 (CNY4.5652) |
| 1000+ | CNY4.030 (CNY4.5539) |
| 5000+ | CNY3.960 (CNY4.4748) |
Product Information
Product Overview
The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Applications
Audio, Consumer Electronics, Power Management
Technical Specifications
N Channel
18A
TO-220AB
10V
100W
175°C
-
No SVHC (21-Jan-2025)
200V
0.1ohm
Through Hole
4.9V
3Pins
-
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate