Print Page
IRFR5305TRPBF
Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRPBF
Order Code2097998
Also Known AsSP001557082
Technical Datasheet
72,362 In Stock
Need more?
2359 Next business day delivery available(Shanghai stock)
70003 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.810 (CNY13.3453) |
| 10+ | CNY6.370 (CNY7.1981) |
| 100+ | CNY4.970 (CNY5.6161) |
| 500+ | CNY3.910 (CNY4.4183) |
| 1000+ | CNY3.030 (CNY3.4239) |
| 5000+ | CNY2.970 (CNY3.3561) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY11.81 (CNY13.35 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR5305TRPBF
Order Code2097998
Also Known AsSP001557082
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id31A
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
- Ultra low on-resistance
- Advanced process technology
- Fully avalanche rated
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for IRFR5305TRPBF
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00023