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IXDN75N120
IGBT Module, Single, 150 A, 2.2 V, 660 W, 150 °C, SOT-227B
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No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXDN75N120
Order Code3438369
Technical Datasheet
IGBT ConfigurationSingle
Continuous Collector Current150A
Collector Emitter Saturation Voltage2.2V
Power Dissipation660W
Operating Temperature Max150°C
Transistor Case StyleSOT-227B
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
IGBT Configuration
Single
Collector Emitter Saturation Voltage
2.2V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Continuous Collector Current
150A
Power Dissipation
660W
Transistor Case Style
SOT-227B
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004