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IXTP3N60P
Power MOSFET, N Channel, 600 V, 3 A, 2.9 ohm, TO-220, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP3N60P
Order Code1427370
Your Part Number
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP3N60P
Order Code1427370
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id3A
Drain Source On State Resistance2.9ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXTP3N60P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.
- International standard package
- Unclamped inductive switching (UIS) rated
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
2.9ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004