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IXTN110N20L2
MOSFET Transistor, N Channel, 100 A, 200 V, 0.024 ohm, 10 V, 4.5 V
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY385.560 (CNY435.6828) |
| 5+ | CNY337.370 (CNY381.2281) |
| 10+ | CNY285.560 (CNY322.6828) |
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CNY385.56 (CNY435.68 inc GST)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTN110N20L2
Order Code3930140
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation735W
Operating Temperature Max150°C
Product Range-
Product Overview
N-channel enhancement mode guaranteed FBSOA avalanche rated suitable for use in programmable loads, current regulators, DC-DC converters, battery chargers, DC choppers, temperature and lighting controls applications.
- Linear L2™ power MOSFET w/extended FBSOA
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Moulding epoxy meets UL94 V-0 flammability classification
- MiniBLOC with aluminium nitride isolation
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Power Dissipation
735W
Product Range
-
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.024ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001