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IRLML6401
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount
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ManufacturerMULTICOMP PRO
Manufacturer Part NoIRLML6401
Order Code4655265
Product RangeMulticomp Pro MOSFET Transistros
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY1.470 (CNY1.6611) |
| 10+ | CNY1.180 (CNY1.3334) |
| 100+ | CNY0.834 (CNY0.9424) |
| 500+ | CNY0.583 (CNY0.6588) |
| 1000+ | CNY0.417 (CNY0.4712) |
| 5000+ | CNY0.365 (CNY0.4124) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY7.35 (CNY8.31 inc GST)
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Product Information
ManufacturerMULTICOMP PRO
Manufacturer Part NoIRLML6401
Order Code4655265
Product RangeMulticomp Pro MOSFET Transistros
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4.3A
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage1.8V
Gate Source Threshold Voltage Max950mV
Power Dissipation1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMulticomp Pro MOSFET Transistros
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The IRLML6401 is a P-Channel HEXFET® Power MOSFET designed by Infineon (originally International Rectifier). Engineered for space-efficient and low-voltage applications, this MOSFET delivers high performance in compact SOT-23 packaging. Its low R DS(on), fast switching capability, and logic-level gate drive make it ideal for battery-powered and portable applications.
- P-Channel MOSFET (enhancement mode)
- Drain-to-Source Voltage (V DS): –20V
- Gate-to-Source Voltage (V GS): ±8V max
- Continuous Drain Current (I D): –3.7A @ T<sub>A</sub> = 25°C
- R DS(on): 0.055Ω max @ V GS = –4.5V
- Fast switching speed
- Low gate charge (typ. 5.2nC)
- Logic-level gate drive
- Lead-free, RoHS compliant
- Operates with logic-level voltages, making it easy to drive with standard microcontrollers.
- Tiny SOT-23 package saves board space, perfect for densely populated PCBs.
Applications
DC/DC Converters, Power Management, Motor Drive & Control
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
1.8V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
950mV
No. of Pins
3Pins
Product Range
Multicomp Pro MOSFET Transistros
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.107