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PMF170XP,115
Power MOSFET, P Channel, 20 V, 1 A, 0.2 ohm, SOT-323, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.100 (CNY2.373) |
| 10+ | CNY1.520 (CNY1.7176) |
| 100+ | CNY0.964 (CNY1.0893) |
| 500+ | CNY0.576 (CNY0.6509) |
| 1000+ | CNY0.466 (CNY0.5266) |
| 5000+ | CNY0.355 (CNY0.4012) |
Price for:Each
Minimum: 5
Multiple: 5
CNY10.50 (CNY11.87 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMF170XP,115
Order Code2069557
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.2ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation290mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
PMF170XP,115 is a P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, high-side load switch, and switching circuits.
- Low RDSon, very fast switching
- Drain-source breakdown voltage is -20V min at ID=-250µA; VGS=0V; Tj=25°C
- Gate-source threshold voltage is -0.9V typ at ID=-250µA; VDS=VGS; Tj=25°C
- Drain-source on-state resistance is 175mohm typ at VGS=-4.5V; ID=-1A; Tj=25°C
- Total gate charge is 2.6nC typ at VDS=-10V; ID=-1A; VGS=-4.5V;Tj=25°C
- Source-drain voltage is -0.7V min at IS=-0.4A; VGS=0V; Tj=25°C
- Rise time is 16ns typ at VDS=-10V; ID=-1A; VGS=-4.5V;RG(ext)=6ohm; Tj=25°C
- Fall time is 13ns typ at VDS=-10V; ID=-1A; VGS=-4.5V;RG(ext)=6ohm; Tj=25°C
- Output capacitance is 43pF typ at VDS=-10V; f=1MHz; VGS=0V;Tj= 25°C
- Ambient temperature range from -55 to 150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
290mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000198