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2N7000BU
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.540 (CNY2.8702) |
| 10+ | CNY1.550 (CNY1.7515) |
| 100+ | CNY0.859 (CNY0.9707) |
| 500+ | CNY0.852 (CNY0.9628) |
| 1000+ | CNY0.747 (CNY0.8441) |
| 5000+ | CNY0.681 (CNY0.7695) |
Price for:Each
Minimum: 5
Multiple: 5
CNY12.70 (CNY14.35 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7000BU
Order Code2453761
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
- Fast switching times
- Improved inductive ruggedness
- Lower input capacitance
- Extended safe operating area
- Improved high-temperature reliability
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.9V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000205