Print Page
FDD8451
Power MOSFET, N Channel, 40 V, 28 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
10,631 In Stock
Need more?
300 Next business day delivery available(Shanghai stock)
1083 Delivery in 3-4 Business Days(Shanghai stock)
9248 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY7.850 (CNY8.8705) |
| 10+ | CNY6.430 (CNY7.2659) |
| 100+ | CNY5.190 (CNY5.8647) |
| 500+ | CNY4.330 (CNY4.8929) |
| 1000+ | CNY4.130 (CNY4.6669) |
| 5000+ | CNY3.920 (CNY4.4296) |
Price for:Each
Minimum: 1
Multiple: 1
CNY7.85 (CNY8.87 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8451
Order Code2322587
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id28A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (14-Jun-2023)
Product Overview
The FDD8451 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS (ON).
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Fast switching
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (14-Jun-2023)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000479