FDC6306P
Dual MOSFET, P Channel, 20 V, 1.9 A
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.540 (CNY2.8702) |
| 500+ | CNY1.910 (CNY2.1583) |
| 1000+ | CNY1.740 (CNY1.9662) |
| 5000+ | CNY1.650 (CNY1.8645) |
Product Information
Product Overview
The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
-
20V
0.127ohm
1.9A
-
0.17ohm
900mV
960mW
960mW
PowerTrench Series
-
No SVHC (27-Jun-2024)
P Channel
20V
1.9A
-
Surface Mount
4.5V
SuperSOT
6Pins
-
150°C
-
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDC6306P
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Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate