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FDS6875
Dual MOSFET, P Channel, 20 V, 6 A
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2,775 In Stock
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475 Next business day delivery available(Shanghai stock)
2300 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.310 (CNY3.7403) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY331.00 (CNY374.03 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6875
Order Code9844899RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id6A
Continuous Drain Current Id N Channel-
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.024ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max800mV
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- -6A Continuous drain current
- -20A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.024ohm
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001134