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FDS6890A
Dual MOSFET, N Channel, 20 V, 7.5 A, 0.013 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.240 (CNY7.0512) |
| 500+ | CNY6.080 (CNY6.8704) |
| 2500+ | CNY5.930 (CNY6.7009) |
| 5000+ | CNY5.780 (CNY6.5314) |
| 7500+ | CNY5.610 (CNY6.3393) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY624.00 (CNY705.12 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6890A
Order Code9844732RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id7.5A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.013ohm
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.013ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max800mV
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6890A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Motor Drive & Control, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
7.5A
On Resistance Rds(on)
0.013ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.013ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
2W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
7.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000224