Print Page
FDS8949
Dual MOSFET, N Channel, 40 V, 6 A, 0.029 ohm
Image is for illustrative purposes only. Please refer to product description.
30,524 In Stock
Need more?
8040 Next business day delivery available(Shanghai stock)
13267 Delivery in 5-6 Business Days(UK stock)
9217 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.840 (CNY3.2092) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY284.00 (CNY320.92 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8949
Order Code1324814RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id6A
On Resistance Rds(on)0.029ohm
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.029ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS8949 is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.029ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.029ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.9V
Power Dissipation Pd
2W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDS8949
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000111