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NTHD3100CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.710 (CNY6.4523) |
| 500+ | CNY4.670 (CNY5.2771) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY571.00 (CNY645.23 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHD3100CT1G
Order Code2845402RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id3.9A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.9A
On Resistance Rds(on)0.064ohm
Continuous Drain Current Id P Channel3.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.064ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.064ohm
Transistor Case StyleChipFET
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd1.1W
No. of Pins8Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive small brushless DC motor applications.
- Small size
- 40% Smaller then TSOP-6 package
- Trench P-channel for low ON-resistance
- Low gate charge N-channel for test switching
Applications
Industrial, Power Management, Portable Devices, Motor Drive & Control
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
3.9A
Continuous Drain Current Id N Channel
3.9A
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance N Channel
0.064ohm
Drain Source On State Resistance P Channel
0.064ohm
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.064ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
ChipFET
Power Dissipation Pd
1.1W
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001