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NTUD3169CZT5G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 220 mA, 220 mA, 0.75 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.350 (CNY1.5255) |
| 500+ | CNY1.330 (CNY1.5029) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY135.00 (CNY152.55 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTUD3169CZT5G
Order Code2533207RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id220mA
Continuous Drain Current Id N Channel220mA
On Resistance Rds(on)0.75ohm
Continuous Drain Current Id P Channel220mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.75ohm
Drain Source On State Resistance P Channel0.75ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-963
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd125mW
Power Dissipation N Channel125mW
Power Dissipation P Channel125mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTUD3169CZT5G is a N/P-channel complementary MOSFET offers a low RDS (ON) solution in the ultra small package. It is suitable for load switch with level shift applications.
- 1.5V Gate voltage rating
- Ultra thin profile (<lt/>0.5mm)
- Fit easily into extremely thin environments such as portable electronics
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
220mA
Continuous Drain Current Id P Channel
220mA
Drain Source On State Resistance N Channel
0.75ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
125mW
Power Dissipation P Channel
125mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
220mA
On Resistance Rds(on)
0.75ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.75ohm
Transistor Case Style
SOT-963
No. of Pins
6Pins
Power Dissipation N Channel
125mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536